# III-nitride device integrates sensing and memory for in-sensor computing > HelixNews · Web page: https://helixnews.one/story/974230 · All pages for agents: https://helixnews.one/llms.txt 1 outlet covering · First listed: Phys.org, Nov 11, 2026, 7:40 AM · Read it: A new study published in Nature Materials reports that researchers have developed an aluminum gallium nitride device that combines light detection, memory and basic processing by controlling charge at polarization interfaces. The device can detect light at the nanowatt-per-square-centimeter level and operate stably at temperatures up to 300°C. ## Who's covering it In the order they published: - Nov 11, 2026, 7:40 AM: [III-nitride device integrates sensing and memory for in-sensor computing]() — Phys.org (Science news) A new study published in Nature Materials reports that researchers have developed an aluminum gallium nitride device that combines light detection, memory and basic processing by controlling charge at polarization interfaces. The device can detect light at the nanowatt-per-square-centimeter level and operate stably at temperatures up to 300°C.